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반도체장비

MDP300 MDP300
Model ID MD-P300
Model No. NM-EFF1C
Productivity
*1
C4:0.65s / IC(including dipping
motion), Thermosonic:0.65s /
IC(including US process time of 0.2s)
Placement accuracy
*1
XY(3σ at PFSC conditions):±5 µm
Substrate dimensions L 50 mm × W 50 mm to L 330 mm ×
W 330 mm (Heating specifications :
L 330 mm × W 220 mm)
Die dimensions L 1 mm × W 1 mm to L 25 mm ×
W 25 mm ( Thermosonic :
L7 mm × W 7 mm)
Number of
die types
Up to 12 product types
(AWC specifications) *1 nozzle type
Die supply Wafer frame 12 inches
(Option:8 inches)
Bonding
load
VCM head : 1N to 50 N
(Option:2 N to 100 N)
Head heating Thermosonic : Up to 300℃
Substrate heating*2 Constant heating, Up to 200℃
(Heating bonding stage specifications:
Max. substrate size
L 330 mm × W 220 mm)
Power source
*3
3-phase AC 200V ± 10V, 50/60 Hz,
Up to 4 kVA (Up to 7 kVA for heating
specification)
Pneumatic source 0.4 Mpa, 50L/min(A.N.R.)
(Up to 150 L/min for full-featured
machine including cooling air)
Dimensions W 1,380 mm × D 1,640 mm ×
H 1,430 mm ( without loader /
unloader)
Mass 2,300 kg ( without loader / unloader)
    • *1 :
    • The described productivity and placement accuracy may differ depending on the conditions of use.
    • *2 :
    • Maximum setting temperature differ depending on the maximum substrate size. Please contact us individually.
    • *3 :
    • 3-phase 208 / 220 / 380 / 400 / 415 / 480
    • For details, please refer to the specification sheet.
MDP300