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현재위치 > 제품소개 > 반도체장비 > Panasonic

반도체장비

MDP200US2 MDP200US2
Model ID MD-P200US2
Model No. NM-EFF1D
Productivity
*1		 0.65 s/ IC for thermosonic bonding
（Including process time of
0.2 seconds. Under the fastest
conditions）
Placement accuracy
*1		 XY（3σ at PFSC conditions）：±7 µm
Substrate dimensions L 50 mm × W 30 mm to L 120 mm
× W 120 mm
Die dimensions L 0.25 mm × W 0.25 mm to
L 6 mm × W 6mm
Number of
die types		 1 product type (manual wafer
supply) / Up to 12 product types
(AWC specifications)
*Nozzle is one type
Die supply Wafer frame（Max. 8 inch）, Tray
Bonding
load		 VCM head for thermosonic process :
1 N to 50 N （Option : 2 N to 100 N）
Head heating Up to 300℃ for the VCM head
Substrate heating Constant heating, Up to 300℃
Power source
*2		 3-phase AC 200 V ±10V, 50 / 60 Hz,
Up to 1.7 kVA（Up to 7.5 kVA
for heating specification）
Pneumatic source 0.4 to 0.5 Mp（a Max. 0.8 Mpa）,
30 L / min（A.N.R.）（Up to 150 L /
min for full-featured machine
including cooling air）
Dimensions W 1 340 mm × D 1 140 mm ×
H 1 400 mm（Including loader/
unloader）
Mass 1,750 kg( Including loader / unloader）
    • *1 :
    • The described productivity and placement accuracy may differ depending on the conditions of use.
    • *2 :
    • Three phase 208 / 220 / 380 / 400 / 415 / 480
    • For details, refer to the specification
MDP200US2